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| ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V(BR)CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m PD = 1.2W Complementary part number: ZXTP2025F typical VCE(sat) < 40mV @ 1A Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Feature * * * * * Higher power dissipation SOT23 Package High peak current Low saturation voltage High gain 80V forward blocking voltage Applications * * * * MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive DC-DC converters Pinout - top view Ordering information Device ZXTN2031FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 322 Issue 2 - January 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN2031F Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current (a) Base current Power dissipation @ TA=25oC (a) Linear derating factor Power dissipation @ TA=25oC (b) Linear derating factor Power dissipation @ TA=25oC (c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit 80 80 50 7.0 12 5 1.2 1.0 8.0 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V A A A W mW/oC W mW/oC W mW/oC oC Thermal resistance Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Symbol RJA RJA RJA Value 125 104 80 Unit oC/W oC/W oC/W NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs. Issue 2 - January 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN2031F Characteristics Issue 2 - January 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN2031F Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Emitter-base cut-off current Static forward current transfer ratio Symbol V(BR)CBO V(BR)CEV V(BR)CEO V(BR)EBO ICEV Min. 80 80 50 7.0 Typ. 175 175 75 8.3 <1 <1 <1 190 200 200 80 Collector-emitter saturation voltage VCE(sat) 300 350 340 125 13 30 80 135 Base-emitter saturation voltage VBE(sat) 0.80 0.92 0.83 125 29 16 27 468 44 2%. Max. Unit V V V V Conditions IC=100A IC =1A, -1V< VBE<+0.3V IC=10mA (a) IE=100A VCE=60V, VBE = -1V VCB=60V VEB=6V IC=10mA, VCE=2V(a) IC=500mA, VCE=2V(a) IC=2A, VCE=2V(a) IC=5A, VCE=2V(a) 20 20 10 nA nA nA Collector-base cut-off current ICBO IEBO HFE 560 18 40 110 170 0.90 1.00 0.93 mV mV mV mV V V V MHz pF ns ns ns ns IC=0.1A, IB=5mA(a) IC=1A, IB=100mA(a) IC=2A, IB=40mA(a) IC=5A, IB=250mA(a) IC=2A, IB=40mA(a) IC=5A, IB=250mA(a) IC=5A, VCE=2V(a) Ic=500mA, VCE=10V, f=50MHz VCB=10V, f=1MHz VCC=12V, IC=2.5A, IB1=IB2=125mA Base-emitter turn-on voltage VBE(on) Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT Cobo t(d) t(r) t(stg) t(f) NOTES: (a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle Issue 2 - January 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN2031F Typical characteristics Issue 2 - January 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN2031F Packaging details - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - January 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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